BUK9230-100B N沟道MOS管逻辑电平FET

BUK9230-100B产品描述

逻辑电平N沟道增强型场效应晶体管(FET)，采用塑料封装，使用TrenchMOS技术。

该产品设计符合相应AEC标准，适用于汽车电子关键型应用。

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

BUK9230-100B产品特性和好处

符合AEC Q101标准

低导通电阻，因而导通损耗很小

适用于逻辑电平栅极驱动源

额定温度为185 °C，适用于对热性能要求苛刻的环境

„ AEC Q101 compliant

„ Low conduction losses due to low

on-state resistance

„ Suitable for logic level gate drive

sources

„ Suitable for thermally demanding

environments due to 185 °C rating

BUK9230-100B应用程序

12 V、24 V和42 V负载

汽车系统

通用电源开关

马达、灯具和螺线管

12 V, 24 V and 42 V loads

„ Automotive systems

„ General purpose power switching

„ Motors, lamps and solenoids