供应Central Semi CMPT3906 (晶体管)

These CENTRAL SEMICONDU*OR devices are
complementary silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for *all signal general
purpose amplifier and switching applications.

MAXIMUM RATINGS: (TA=25°C) SY*OL CMPT3904G* CMPT3906G* UNITS
Collector-Base Voltage VCBO 60 40 V
Collector-Emitter Voltage VCEO 40 40 V
Emitter-Base Voltage VEBO 6.0 5.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to 150 °C
Thermal Resistance ΘJA 357 °C/W