M二*管LL4148
地区:广东 深圳
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大量现货,国产芯片,耐压100V以上.
LL4148 | |||||||||
SWITCHING DIODE | REVERSE VOLTAGE:75 VOLTS | ||||||||
CURRENT:0.15 AMPER* | |||||||||
FEATUR* | |||||||||
· Silicon epitaxial planar diode | Mini-MELF | ||||||||
· High speed switching diode | |||||||||
· 500mV power dissipation | |||||||||
· These diodes are also available in gl* case | 0.063(1.6) | ||||||||
Mini-MELF,SOD-323,SOT-323 | 0.055(1.4) | ||||||||
0.019(0.48) | |||||||||
MECHANICAL DATA | 0.142(3.6) | 0.011(0.28) | |||||||
Case:DO-35,Gl* Case | 0.134(3.4) | ||||||||
Polarity: Color band denotes cathode | inch(mm) | ||||||||
Weight: 0.029 gram | |||||||||
MAXIMUM RATIONGS AND ELE*RICAL CHARA*ERISTICS | |||||||||
Ratings at 25℃ ambient temperature unless otherwise specified. | |||||||||
MAXIMUN RATINGS | |||||||||
Parameters | Symbols | Value | UNITS | ||||||
Reverse Voltage | VR | 75 | V | ||||||
Peak Reverse Voltage | VRM | 100 | V | ||||||
Average Forward Rectified Current Half Wave Rectification with Resistive Load at Tamb=25 ℃ and f≥50HZ | Io | 150 | mA | ||||||
Forward Surge Current | IFSM | 500 | mA | ||||||
Power Dissipation | Ptot | 5001) | mW | ||||||
Junction Temperature | TJ | 175 | ℃ | ||||||
Storage Temperature Range | TsTG | -65--- 175 | ℃ | ||||||
ELE*RICAL CHARA*ERISTICS | |||||||||
Parameters | Symbol | MIN | MAX | UNITS | |||||
Forward Voltage at IF=100mA | VF | 1 | V | ||||||
Leakage Current at VR=20V | IR | 25 | nA | ||||||
at VR=75V | IR | 5 | μA | ||||||
at VR=20V TJ=150℃ | IR | 50 | μA | ||||||
Voltage Rise when Switching ON Tested with 50mA pulses tp=0.1us.Rise Time<30ns.fp=5 to 100HZ | Vfr | 2.5 | V | ||||||
Capacitance at VF=VR=0V,f=1MHZ | Ctot | 4 | pF | ||||||
Reverse Recovery Time=IF=10mA,VR=6V,IR=1mA,RL=100Ω | trr | 4 | ns | ||||||
Thermal Resistance Junction to Ambient | RθJA | 3501) | K/W | ||||||
Rectification Efficiency at 100MHZ,VFR=2V | nV | 0.45 | |||||||
1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature | |||||||||
稳压管
否
ST/意法
LL4148
硅(Si)
*120V以上电压
电器
120V
是