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ABSOLUTE MAXIMUM RATINGS
PARAMETER | SY*OL | VALUE | UNIT |
Collector-Base Voltage | VCBO | 700 | V |
Collector-Emitter Voltage | VCEO | 410 | V |
Emitter -Base Voltage | VEBO | 9 | V |
Collector Current | IC | 1.2 | A |
Total Power Dissipation | PC | 25 | W |
Storage Temperature | Tstg | -65~150 | ℃ |
Junction Temperature | Tj | 150 | ℃ |
ELE*RICAL CHARA*ERISTICS(Ta=25℃Unless OtherWise Specified)
Parameter | Symbol | Test Conditons | Min | Max | Unit |
Collector-Base Breakdown Voltage | BVCBO | Ic=1mA,Ie=0 | 700 |
| V |
Collector-Emitter Breakdown Voltage | BVCEO | Ic=10mA,Ib=0 | 410 |
| V |
Emitter-Base Breakdown Voltage | BVEBO | Ie=1mA, Ic=0 | 9 |
| V |
Collector-Base Cutoff Current | ICBO | Vcb=700V,Ie=0 |
| 10 | μA |
Collector-Emitter Cutoff Current | ICEO | Vce=410V,Ib=0 |
| 10 | μA |
Emitter –Base Cutoff Current | IEBO | Veb=9V,Ic=0 |
| 15 | μA |
DC Current Gain | hFE(1) | Vce=5V,Ic=200mA | 10 | 40 |
|
DC Current Gain | hFE(2) | Vce=5V,Ic=1mA | 8 |
|
|
Collector-Emitter Saturation Voltage | VCE(sat) | Ic=500mA,Ib=100mA |
| 0.4 | V |
Base-Emitter Saturation Voltage | VBE(sat) | Ic=500mA,Ib=100mA |
| 1.2 | V |
Storage Time | Ts | VCC=5V,IC=250mA, (UI9600) | 1.5 | 3.5 | μS |
Falling Time | Tf |
| 0.8 |
开关
国产/*
BAT203
硅(Si)
TO-92
铜脚