*R2045* NAMC 大功率肖特基二*管 代理，*原装现货！

Features
20 A Total (10A Per Diode Leg)
Guard Ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V 0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Pb Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 2.26 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
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*R2045H*
c
Dimensions In Millimeters Symbol Min. Max.
A 4.470 4.670
A1 2.520 2.820
b 0.710 0.910
b1 1.170 1.370
c 0.310 0.530
c1 1.170 1.370
D 10.010 10.310
E 8.500 8.900
E1 12.060 12.460
e 2.540 TYP.
e1 4.980 5.180
F 2.590 2.890
h 0.000 0.300
L 13.400 13.800
L1 3.560 3.960
Φ 3.735 3.935
RATINGS (Per Diode Leg)
Rating Symbol *R2045H* Unit
Peak Repetitive Reverse Voltage VRRM 45 V
Average Rectified Forward Current (Rated VR) TC = 133°C IF(*) 10 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C IFRM 20 A
IFSM
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM A
A
Operating Junction Temperature TJ °C
Voltage Rate of Change (Rated VR) dv/dt V/ s
Maximum Instantaneous Forward Voltage (iF = 10Amps, T C = 25°C) vF 0.70 V
150
5
10,000
- 65 to 175
Maximum Instantaneous Reverse Current
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
IR
6.0
0.05
mA
Nonrepetitive Peak Surge Current
(Surge applied at rates load conditions halfwave, single phase, 60Hz)
Schottky Barrier Diodes