PM200CLA120 三菱模块IPM封装

特征
a）采用新的第五代IGBT（CSTBT）芯片，通过精密的规范加工，该芯片性能有1μm的提升。
例如，典型的Vce（SAT）=1.9V@ TJ =125°C
B）我采用过温保护由TJ检测CSTBT芯片和错误输出有可能来自IPM的各个保护的上臂和下臂。

 •200A，1200V电流检测IGBT型逆变器
 •单片栅极驱动和保护逻辑
 •探测，保护和状态指示电路用于短路，过温＆欠压（P-FO可用于上臂设备）
 •应用于原声噪声低、37kw的逆变器

 •UL认证：黄色卡号：E80276（N）文件号：E80271

应用：

一般的变频器，伺服驱动器和其它马达

FEATURE

a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1μm fine rule process.
For example, typical Vce(sat)=1.9V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each conservation
upper and lower arm of IPM.
• 3φ 200A, 1200V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit,
over-temperature & under-voltage (Fo available from
all arm devices)
• Acoustic noise-less 37kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271