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Features
RDS(ON),Vgs@2.5V,Ids@3.3A= 30mΩ;
RDS(ON),Vgs@4.5V,Ids@8.2A= 20mΩ;
Package
TSSOP-08 |
SO-8 |
Top View |
|
SOT-23-6 |
Internal Schematic Diagram |
|
N-Channel MOSFET |
Maximum Ratings and Thermal Characteristics(Ta = 25℃unless otherwise noted)
Parameter |
Symbol |
Limit |
Unit |
|
Drain-Source voltage |
VDS |
20 |
V |
|
Gate-Source voltage |
VGS |
±12 |
||
Continuous drain current |
ID |
8.2 |
A |
|
Pulsed drain current1) |
IDM |
30 |
||
Maximum power dissipation |
TA = 25℃ |
PD |
2 |
W |
TA = 75℃ |
1.3 |
|||
Operating junction and storage temperature range |
TJ,Tstg |
-55 to 150 |
℃ |
|
Junction-to-Ambient thermal resistance (PCB mounted)2) |
RθJA |
62.5 |
℃/W |
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in22oz Cu PCB board
SC8205A、SC8205S
SC