供应原装SC8205,SC8205价格,SC8205现货库存

地区:广东 深圳
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深圳迅瑞创芯科技有限公司

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Features


  • Advanced trench process technology;
  • High density cell design for ultra low On-Resistance;
  • High power and current handing capability;
  • Ideal for Li ion battery pack applications;
  • VDS= 20V

RDS(ON),Vgs@2.5V,Ids@3.3A= 30mΩ;

RDS(ON),Vgs@4.5V,Ids@8.2A= 20mΩ;

  • Recommended Package: TSSOP-8/SO-8/SOT-23-6.


Package

TSSOP-08

SO-8

   

Top View

SOT-23-6

Internal Schematic Diagram

   

 

N-Channel MOSFET

 

Maximum Ratings and Thermal Characteristics(Ta = 25unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source voltage

VDS

20

V

Gate-Source voltage

VGS

±12

Continuous drain current

ID

8.2

A

Pulsed drain current1)

IDM

30

Maximum power dissipation

TA = 25

PD

2

W

TA = 75

1.3

Operating junction and storage temperature range

TJ,Tstg

-55 to 150

Junction-to-Ambient thermal resistance (PCB mounted)2)

RθJA

62.5

/W

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature

     2. 1-in22oz Cu PCB board

型号/规格

SC8205A、SC8205S

品牌/商标

SC