华润华晶MOS场效应管CS1N60A1H,TO-92,参数0.8A600V，*

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华晶600V系列MOS管CS1N60A1H，TO-92，0.8A600V,*。

General Description：
VDSS  600V
ID  0.8A
PD (TC=25℃)  3W
RDS(ON)T*  12Ω

CS1N60A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form isTO-92, which accords with the RoHS standard.

Features：
z Fast Switching
z Low ON Resistance(Rdson≤15Ω)
z Low Gate Charge (T*ical Data:5.0nC)
z Low Reverse transfer capacitances(T*ical:2.7pF)
z 100% Single Pulse avalanche energy Test