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LED屏专用MOS IC
LED屏专用MOS IC
LED屏专用MOS IC
MEM2317SG Series Dual P-channel enhancement mode field-effect transistor, produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.
Features
-20V/-6A
Ros(ON) =75mQ@ Vas=-10V,Ib=-6A
Ros(oN) =90mO@ Vas=-4.5V,Io=-4A
High Density Cell Design For Ultra Low
On-Resistance
Surface mount package:SOP8
Typical Application
Power management
Load switch
Battery protection
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ME
SOP-8
全新原装
-20V