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KF3001 Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation,and low power dissipation in a very small outline surface mount package.
FEATURES
-20V/-2.8A: Ros(ON) =93mQ@ Vcs=-4.5V,Ib=-2.8A
Ros(ON) =113mM@ Vcs=-2.5V,Io=-2A
High Density Cell Design For Ultra Low On
-Resistance
Subminiature surface mount package:SOT23-3L
Typical Application
Power management
Load switch
Battery protection
KF3001 Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation,and low power dissipation in a very small outline surface mount package.
FEATURES
-20V/-2.8A: Ros(ON) =93mQ@ Vcs=-4.5V,Ib=-2.8A
Ros(ON) =113mM@ Vcs=-2.5V,Io=-2A
High Density Cell Design For Ultra Low On
-Resistance
Subminiature surface mount package:SOT23-3L
Typical Application
Power management
Load switch
Battery protection
KF3001 Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation,and low power dissipation in a very small outline surface mount package.
FEATURES
-20V/-2.8A: Ros(ON) =93mQ@ Vcs=-4.5V,Ib=-2.8A
Ros(ON) =113mM@ Vcs=-2.5V,Io=-2A
High Density Cell Design For Ultra Low On
-Resistance
Subminiature surface mount package:SOT23-3L
Typical Application
Power management
Load switch
Battery protection
P沟道场效应管IC
P沟道场效应管IC
P沟道场效应管IC P沟道场效应管IC
KF3001
KF
SOT-23-3
全新原装
-20V
±8V
-2.8A
80mΩ