BFG425W高频贴片三*管 (SOT-343R)

BFG425W
NPN 25 GHz wideband transistor

SY*OL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter ? ? 10 V
VCEO collector-emitter voltage open base ? ? 4.5 V
IC collector current (DC) ? 25 30 mA
Ptot total power dissipation Ts ? 103 ?C ? ? 135 mW
hFE DC current gain IC = 25 mA; VCE = 2 V; Tj = 25 ?C
Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz ? 95 ? fF
fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 ?C ? 25 ? GHz
Gmax maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 ?C ? 20 ? dB
F noise figure IC = 2 mA; VCE = 2 V; f = 2 GHz; ?S = ?opt ? 1.2 ? dB
CAUTION
Fig.1 Simplified outline SOT343R