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FEATUR*
• Access time: 45, 70 ns
• Low active power: 200 mW (t*ical)
• Low standby power
— 250 µW (t*ical) CMOS standby
— 28 mW (t*ical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
D*CRIPTION
The ISSI IS62C256 is a low power, 32,768 word by 8-bit
CMOS static RAM. It is fabricated using ISSI's highperformance, low power CMOS technology.
When CS is HIGH (deselected), the device *umes a standby
mode at which the power dissipation can be reduced down to
250 µW (t*ical) at CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Select (CS) input and an active LOW Output Enable (OE)
input. The active LOW Write Enable (WE) controls both writing
and reading of the memory.
The IS62C256 is pin compatible with other 32K x 8 SRAMs in
plastic SOP or TSOP (T*e I) package.
单片机
ISSI
IS62C256-45WB
低功耗CMOS静态RAM集成块
28PIN
*
CDIP-28
96+
低功耗CMOS静态RAM集成块