供应场效应三*管 *童系列TO-220

经销二*管三*管场效应   NXP ON  FAIRCHILD ST MIC IR 等品牌贴片式直插系列产品电子元器件.原装现货供应
FQP10N60C/FQPF10N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge *ology.
Features
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
• Low gate charge ( t*ical 44 nC)
• Low Crss ( t*ical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability