W9816G6IH SDRAM 2M 华邦 价格优势

W9816G6IH-6  W9816G6IH

SDRAM 2M

W9816G6IH-6  TSSOP
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1. GENERAL D*CRIPTION
W9816G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
512K words × 2 banks × 16 bits. W9816G6IH delivers a data bandwidth of up to 200M words per
second (-5). For different applications the W9816G6IH is sorted into the following speed grades: -5/-
6/-7/-6I and -7I. The -5 parts can run up to 200MHz/CL3 or 143MHz/CL2. The -6/-6I parts can run up
to 166MHz/CL3 (the -6I grade which is guaranteed to support -40°C ~ 85°C). The -7/-7I parts can run
up to 143MHz/CL3 (the -7I grade which is guaranteed to support -40°C ~ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an A*IVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9816G6IH is ideal for main memory in
high performance applications.

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