制造商: | Fairchild Semiconductor | |
RoHS: |
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技术: | Si | |
安装风格: | Through Hole | |
封装 / 箱体: | TO-247-3 | |
通道数量: | 1 Channel | |
晶体管极性: | N-Channel | |
Vds-漏源极击穿电压: | 600 V | |
Id-连续漏极电流: | 77 A | |
Rds On-漏源导通电阻: | 41 mOhms | |
Vgs - 栅极-源极电压: | 20 V | |
Vgs th-栅源极阈值电压: | 2.5 V to 3.5 V | |
Qg-栅极电荷: | 285 nC | |
工作温度: | - 50 C | |
工作温度: | + 150 C | |
封装: | Tube | |
商标名: | SuperFET II | |
商标: | Fairchild Semiconductor |