AOTF11N70/功率MOS管/AOS美国万达/TO-220F/AOT11N70_技术资料

AOTF11N70/功率MOS管/AOS美国万达/TO-220F/AOT11N70

发布时间：2015/7/25 11:49:44

型号	品牌	封装	备注
AOTF11N70	AOS	TO-220F	Original 全新进口

700V,11A N-Channel MOSFET

AOTF11N70PDF文件

型号	Status	Recommended Replacement	Package	Configuration	Vds	Vgs	Id		Pd		Rds (on) mΩ max							Qg (nC)
					Vds	Vgs	25°C	70°C	25°C	70°C	20V	10V	4.5V	2.5V	1.8V	1.5V	1.2V
					V	V	A	A	W	W	mΩ	mΩ	mΩ	mΩ	mΩ	mΩ	mΩ
AOTF11N70	Full Production	-	TO220F	Single - N	700	30	11	7.2	50	-	-	870	-	-	-	-	-	37.5

AOTF11N70产品描述：

AOT11N70 & AOTF11N70捏造使用先进的高压MOSFET过程提供高水平的性能和设计的鲁棒性在流行交直流两用的应用程序。通过提供低RDS(上),独联体和crs连同这些部分可以保证雪崩能力采用快速进入新的和现有离线电源设计。

The AOT11N70 & AOTF11N70 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.

AOTF11N70产品特点：

VDS                                       800V@150℃
ID (at VGS=10V)                   11A
RDS(ON) (at VGS=10V) <     0.87Ω

AOTF11N70产品内部原理图：

AOTF11N70产品额定参数TA = 25°C,除非另有注明：

AOTF11N70产品封装尺寸：

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