型号 | 封装 | 品牌 | 备注 |
AO4435 | SOIC-8 | AOS美国万代 | original 全新进口 |
35V P沟道 MOS管
AO4435DPF文件
型号 | Status | Recommended Replacement | Package | Configuration | Vds | Vgs | Id | Pd | Rds (on) mΩ max | Qg (nC) | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
25°C | 70°C | 25°C | 70°C | 20V | 10V | 4.5V | 2.5V | 1.8V | 1.5V | 1.2V | ||||||||
V | V | A | A | W | W | mΩ | mΩ | mΩ | mΩ | mΩ | mΩ | mΩ | ||||||
AO4435 | Full Production | - | SOIC-8 | Single - P | -30 | 25 | -10.5 | -8 | 3 | 2 | 14 | 18 | - | - | - | - | - | 9.5 |
AO4435产品描述:
AO4435使用先进的海沟技术提供的RDS(上)和超低低门25v门评级。该设备适合使用负荷开关或脉宽调制的应用程序。
The AO4435 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
-RoHS Compliant
-AO4435 is Halogen Free
AO4435产品特点:
VDS = -30V
ID = -10.5A (VGS = -20V)
RDS(ON) < 14mΩ (VGS = -20V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -5V)
100% UIS Tested
100% Rg Tested
AO4435产品内部原理图:
AO4435产品额定参数TA = 25°C,除非另有注明:
AO4435产品封装尺寸: