FQPF4N90C/晶体管/MOSFET/N沟道/4A/900V/TO-220F/FQP4N90C_技术资料

FQPF4N90C/晶体管/MOSFET/N沟道/4A/900V/TO-220F/FQP4N90C

发布时间：2015/7/23 13:28:17

型号	品牌	封装	备注
FQPF4N90C	fairchld/仙童	TO-220F	original 全新进口

FQPF4N90C 晶体管, MOSFET, N沟道, 4 A, 900 V, 3.5 ohm, 10V, 5V

FQPF4N90CPDF文件

FQPF4N90C产品描述：

该N 沟道增强型功率MOSFET 产品采用飞兆半导体的专有平面条形和DMOS 技术生产。这种先进的MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。

This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.

FQPF4N90C产品特点：

4A, 900V, RDS(on) = 4.2Ω（值）@VGS = 10 V,

ID = 2A栅极电荷低（典型值：17nC)

低 Crss（典型值5.6pF)

100% 经过雪崩击穿测试"

FQPF4N90C产品内部原理图：