美国万代 AO3402- N沟道强模式贴片场效应30V 4A

发布时间:2015/10/6 14:46:57

AO3402    N-Channel Enhancement Mode Field Effect Transistor

AO3402 General Description
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. AO3402 is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package.


AO3402 Features
AO3402 VDS (V) = 30V
AO3402 ID = 4 A
AO3402 RDS(ON) < 55mΩ (VGS = 10V)
AO3402 RDS(ON) < 70mΩ (VGS = 4.5V)
AO3402 RDS(ON) < 110mΩ (VGS = 2.5V)

N沟道强模式贴片场效应30V 4A SOT-23贴片封装,AOS全系列代理

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