无锡固电ISC供应2SD1545三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                        

1500

V

V_CEO

Collector-Emitter Voltage                        

600

V

V_EBO

Emitter-Base Voltage

   5

V

I_C

Collector Current- Continuous

5

A

I_B

Base Current- Continuous

2.5

A

P_C

Collector Power Dissipation

@ T_C=25℃

50

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 4.0A; I_B= 0.8A

5.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 4.0A; I_B= 0.8A

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 500V ; I_E= 0

10

μA

I_EBO

Emitter Cutoff Current

V_EB= 5V ; I_C= 0

1.0

mA

h_FE

DC Current Gain

I_C= 1A ; V_CE= 5V

8

f_T

Current-Gain—Bandwidth Product

I_C= 0.1A ; V_CE= 10V

3

MHz

C_OB

Output Capacitance

I_E= 0 ; V_CB= 10V;f_test= 1.0MHz

165

pF

t_f

Fall Time

I_CP= 4A , I_B1(end)= 0.8A

0.5

1.0

μs