FLASH存储器PC28F640J3F75A

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PC28F640J3F75A  PC28F640J3F75A  PC28F640J3F75A

PC28F640J3F75A

Product Features

Architecture

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— 32 Mbit (32 blocks)

— Blank Check to verify an erased block

Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 μs per Byte Effective programming

time

System Voltage

— V CC = 2.7 V to 3.6 V

— V CCQ = 2.7 V to 3.6 V

 Packaging

— 56-Lead TSOP

— 64-Ball Easy BGA package

 Security

— Enhanced security options for code

protection

— Absolute protection with V PEN = Vss

— Individual block locking

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

64 OTP bits, available for customer

programming

Software

— Program and erase suspend support

— Numonyx ® Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

Quality and Reliability

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant


类型

FLASH存储器

封装

EasyBGA-64

Device Density

64Mb

工作电压

2.7V~3.6V

Access Speed

75NS