FLASH存储器M25P16-VMN6TP

商品目录 FLASH存储器

存储器构架(格式) FLASH

存储器接口类型 SPI

存储器容量 16Mb (2M x 8)

工作电压 2.7V ~ 3.6V

存储器类型 Non-Volatile

M25P16-VMN6TP   Features

• SPI bus compatible serial interface

• 16Mb Flash memory

• 75 MHz clock frequency (maximum)

• 2.7V to 3.6V single supply voltage

• Page program (up to 256 bytes) in 0.64ms (TYP)

• Erase capability

– Sector erase: 512Kb in 0.6 s (TYP)

– Bulk erase: 16Mb in 13 s (TYP)

• Write protection

– Hardware write protection: protected area size

defined by non-volatile bits BP0, BP1, BP2

• Deep power down: 1μA (TYP)

• Electronic signature

– JEDEC standard 2-byte signature (2015h)

– Unique ID code (UID) and 16 bytes of read-only

data, available upon customer request

– RES command, one-byte signature (14h) for

backward compatibility

• More than 100,000 write cycles per sector

• More than 20 years data retention

• Automotive grade parts available

• Packages (RoHS compliant)

– SO8N (MN) 150 mils

– SO8W (MW) 208 mils

– SO16 (MF) 300 mils

– VFDFPN8 (MP) MLP8 6mm x 5mm

– VFDFPN8 (ME) MLP8 8mm x 6mm

– UFDFPN8 (MC) MLP8 4mm x 3mm