供应MJL21194G 应功率晶体管 TO-264封装

型号：MJL21194G
品牌：ON
类别：分离式半导体产品
家庭：晶体管(BJT) - 单路
系列：-
晶体管类型：NPN
电流 - 集电极 (Ic)（最大）：16A
电压 - 集电极发射极击穿（最大）：250V
Ib、Ic条件下的Vce饱和度（最大）：4V @ 3.2A，16A
电流 - 集电极截止（最大）：100μA
在某 Ic、Vce 时的最小直流电流增益 (hFE)：25 @ 8A，5V
功率 - 最大：200W
频率 - 转换：4MHz
安装类型：通孔
封装/外壳：TO-264-3，TO-264AA
供应商设备封装：TO-264
包装：管件
其它名称：MJL21194OS
标准包装：25
封装：TO-264

备注：MJL21193和MJL21194利用穿孔发射技术和专门用于高功率音频输出而设计，磁头定位器和线性应用。

                           PNP     MJL21193G                                                       NPN     MJL21194G

The MJL21193 and MJL21194 utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

                                   PNP     MJL21193                                                       NPN     MJL21194

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain −

hFE = 25 Min @ IC

= 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

• These are Pb−Free Devices*

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE limits

of the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable

depending on conditions. At high case temperatures,

thermal limitations will reduce the power than can be handled

to values less than the limitations imposed by second breakdown.

PNP     MJL21193G                                                     NPN     MJL21194G

MJL21194G