BJT MJ21196G MJ21196G 16A 250V 250W NPN

制造商：ON Semiconductor
产品种类：Transistors Bipolar (BJT)
晶体管极性：PNP
集电极—发射极最大电压 VCEO：250 V
发射极 - 基极电压 VEBO：5 V
最大直流电集电极电流：16 A
直流集电极/Base Gain hfe Min：25
配置：Single
最大工作频率：4 MHz
最大工作温度：+ 150 C
安装风格：Through Hole
封装 / 箱体：TO-204-2 (TO-3)
封装：Tray
集电极连续电流：16 A
最小工作温度：- 65 C
功率耗散：250 W
工厂包装数量：100
备注：该MJ21195G和MJ21196G利用多孔发射极技术并专为高功率音频输出，磁头设计定位器和线性应用。
特点
•总谐波失真特点
•高直流电流增益 - ^ hFE= 25分钟@我C= 8 ADC
•出色的增益线性度
•高SOA ： 3 A， 80 V， 1秒

•无铅包可用

The MJ21195G and MJ21196G utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain

• Excellent Gain Linearity

• High SOA

• These Devices are Pb−Free and are RoHS Compliant*

                                          MJ21195G − PNP MJ21196G − NPN

There are two limitations on the power handling

ability of a transistor; average junction temperature

and secondary breakdown. Safe operating area curves

indicate IC − VCE limits of the transistor that must be

observed for reliable operation; i.e., the transistor

must not be subjected to greater dissipation than the

curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C;

TC is variable depending on conditions. At high case

temperatures, thermal limitations will reduce the

power than can be handled to values less than the

limitations imposed by second breakdown.

                                            MJ21195G − PNP MJ21196G − NPN