IRFS4615TRLPBF MOSFET ▊进口原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V

33

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V

24

IDM

Pulsed Drain Current G)

140

P_D @T_C = 25°C

Maximum Power Dissipation

144

W

Linear Derating Factor

0.96

W/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery (]

38

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Symbol

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case @

–––

1.045

°C/W

RqJA

Junction-to-Ambient (PCB Mount) 。

–––

40

EAS (Thermally limited)

Single Pulse Avalanche Energy G)

109

mJ

IAR

Avalanche Current G)

See Fig. 14, 15, 22a, 22b,

A

EAR

Repetitive Avalanche Energy G)

mJ