IRL8114PBF MOSFET ▊进口原装现货▊

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

120 

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

85

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Package Limited)

90

IDM

Pulsed Drain Current ‚

440 †

P_D @T_C = 25°C

Maximum Power Dissipation

115

W

P_D @T_C = 100°C

Maximum Power Dissipation

58

Linear Derating Factor

0.77

W/°C

VGS

Gate-to-Source Voltage

± 20

V

T_J

TSTG

Operating Junction and Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw„

10 lbf·in (1.1 N·m)

Symbol

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case …

–––

1.3

°C/W

RqCS

Case-to-Sink, Flat Greased Surface

0.50

–––

RqJA

Junction-to-Ambient

–––

62

EAS (Thermally limited)

Single Pulse Avalanche Energy ƒ

200

mJ

IAR

Avalanche Current ‚

32

A