AFT20P140-4WNR3 射频管 NXP

AFT20P140-4WNR3

射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV9 2GHz 24W OM780-4

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

1880--2025 MHz, 24 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS

These AFT20P140-4WNR3 24 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 MHz.

Features AFT20P140-4WNR3

• Designed for wide instantaneous bandwidth applications

• Greater negative gate--source voltage range for improved Class C operation

• Able to withstand extremely high output VSWR and broadband operating conditions

• Designed for digital predistortion error correction systems

• In tape and reel. R3 suffix = 250 units, 32 mm tape width, 13--inch reel.

型号: AFT20P140-4WNR3

制造商: NXP