IRFB38N20DPBF MOSFET 现货库存 IR专营

Benefits

LowGate-to-DrainChargetoReduceSwitchingLosses

FullyCharacterizedCapacitanceIncludingEffectiveCOSS

toSimplifyDesign,(SeeApp.NoteAN1001)

FullyCharacterizedAvalancheVoltageandCurrent

Lead-Free

RJC(endoflife)forD2PakandTO-262=0.50°C/W.Thisisthemaximummeasuredvalueafter1000temperature

cyclesfrom-55to150°Candisaccountedforbythephysicalwearoutofthedieattachmedium.