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AOS品牌AO4419 原装正品,欢迎来电咨询合作
General Description Product Summary VDS ID (at VGS=-10V) -9.7A RDS(ON) (at VGS=-10V) < 20mΩ RDS(ON) (at VGS = -4.5V) < 35mΩ 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAS, IAR EAS, EAR TJ , TSTG Symbol t ≤ 10s Steady-State Steady-State RθJL °C Thermal Characteristics W 3.1 Maximum Junction-to-Ambient A TA=70°C 2 Junction and Storage Temperature Range -55 to 150 °C/W RθJA 31 59 40 Parameter Typ Max Units Gate-Source Voltage ±20 V Drain-Source Voltage -30 The AO4419 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applicat
Symbol Min Typ Max Units BVDSS -30 V VDS=-30V, VGS=0V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -1.5 -2.0 -2.5 V ID(ON) -70 A 16.5 20 TJ=125°C 24 29 26 35 mΩ gFS 27 S VSD -0.75 -1 V IS -4 A ISM -70 A Ciss 1040 pF Coss 180 pF Crss 125 pF Rg 2 4 6 Ω Qg (10V) 19 nC Qg (4.5V) 9.6 nC Qgs 3.6 nC Qgd 4.6 nC tD(on) 10 ns tr 5.5 ns tD(off) 26 ns tf 9 ns trr 11.5 ns Qrr 25 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT
AO4419
万代
SOP-8
无铅环保型
贴片式
卷带编带包装
-30V
±20 V
-70A
-27A