福斯特 FIR7N65BPG 电源开关MOSFET

深圳黄金树科技有限公司代理美国福斯特FIRST，无锡新洁能股份有限公司NCEPOWER功率产品，江苏捷捷微JJM可控硅 等二三极，肖特基 LOWVF值电子元件器 本公司长期有库存 ，美国福斯特FIRST FIR7N65BPG,原装正品，欢迎来电咨询合作

  FIR7N65BPG

Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=29nC (Typ.). □ BVDSS=650V,ID=7A □ RDS(on) : 1.2Ω (Max) @VG=10V □ 100% Avalanche Tested G D S PIN Connection TO-251(I-PAK) F

Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 650 V ID Drain Current Tj=25℃ 7.0 A Tj=100℃ 4.7 VGS(TH) Gate Threshold Voltage ±30 V EAS Single Pulse Avalanche Energy (note1) 420 mJ IAR Avalanche Current (note2) 7.0 A PD Power Dissipation (Tj=25℃) 90 W Tj Junction Temperature(Max) 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance,Junction to Case - 1.39 ℃/W RθJA Thermal Resistance,Junction to Ambient - 110 ℃/W 

 FIR7N65BPG

lectrical Characteristics (Ta=25℃ unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage ID=250μA，VGS=0 650 - - V △BVDSS/△TJ Breakdown Voltage Temperature Coefficient ID=250μA ,Reference to 25℃ - 0.67 - V/℃ IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V - - 10 μA VDS=520V, Tj=125℃ 100 IGSSF Gate-body leakage Current, Forward VGS=+30V, VDS=0V - - 100 nA IGSSR Gate-body leakage Current, Reverse VGS=-30V, VDS=0V - - -100 On Characteristics VGS(TH) Date Threshold Voltage ID=250μA,VDS=VGS 2 - 4 V RDS(ON) Static Drain-Source On-Resistance ID=3.5A,VGS=10V - - 1.2 Ω

 FIR7N65BPG