新洁能NCEP1580F N沟道超级沟道功率MOSFET

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NCE N-Channel Super Trench Power MOSFET Description The NCEP1580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =150V,ID =80A RDS(ON) <12.5mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous

Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP1580F NCEP1580F TO-220F-3L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 80 A Drain Current-Continuous(TC=100 ) ℃ ID (100℃) 56.6 A Pulsed Drain Current IDM 320 A Maximum Power Dissipation PD 55 W Derating factor 0.37 W/℃ Single pulse avalanche energy (Note 5) EAS 672 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃