福斯特FIR20N60F N沟道功率MOSFET

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FIR20N60F

VDSS 600 V ID 20 A PD(TC=25ć) 250 W RDS(ON) 0.35 Ÿ Features zFast Switching zLow ON Resistance(RdsoQİŸ zLow Gate Charge (Typical Data:70nC) zLow Reverse transfer capacitances(Typical: 32pF) z100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. Absolute˄Tc= 25ć unless otherwise specified˅ Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 600 V Continuous Drain Current 20 A ID Continuous Drain Current TC = 100 °C 13 A IDM a1 Pulsed Drain Current 80 A VGS Gate-to-Source Voltage f30 V EAS a2 Single Pulse Avalanche Energy 1000 mJ EAR a1 Avalanche Energy ,Repetitive 100 mJ IAR a1 Avalanche Current 14 A dv/dt a3 Peak Diode Recovery dv/dt 4.5 V/ns Power Dissipation 250 W PD Derating Factor above 25°C 2.0 W/ć TJˈTstg Operating Junction and Storage Temperature Range 150ˈ–55 to 150 ć TL MaximumTemperature for Soldering 300 ć FIR

FIR20N60F

Electrical Characteristics˄Tc= 25ć unless otherwise specified˅ OFF Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250μA 600 -- -- V BVDSS/TJ Bvdss Temperature Coefficient ID=250uA,Reference2ć -- 0.65 -- V/ć VDS = 600V, VGS= 0V, Ta = 25ć -- -- 10 IDSS Drain to Source Leakage Current VDS =480V, VGS= 0V, Ta = 125ć 200 μA IGSS(F) Gate to Source Forward Leakage VGS= 30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units