台湾东沅 FKN4002 N-Ch MOSFET

深圳黄金树科技有限公司代理美国福斯特FIRST，无锡新洁能股份有限公司NCEPOWER功率产品，江苏捷捷微JJM可控硅 等二三极，肖特基 LOWVF值电子元件器 本公司长期有台湾东沅FKN4002库存，保证原厂原装品质，假一赔万。

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.032 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=4A --- --- 32 m VGS=4.5V , ID=3A --- --- 45
VGS(th) Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.5 --- mV/℃ IDSS Drain-Source Leakage Current
VDS=32V , VGS=0V , TJ=25℃ --- --- 1
uA
VDS=32V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=4A --- 12 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 ---  Qg Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=3A
--- 5.5 ---
Qgs Gate-Source Charge --- 1.25 --- nC
Qgd Gate-Drain Charge --- 2.5 ---
Td(on) Turn-On Delay Time
VDD=15V , VGS=10V , RG=3.3 ID=1A
--- 8.9 ---
ns
Tr Rise Time --- 2.2 ---
Td(off) Turn-Off Delay Time --- 41 ---
Tf Fall Time --- 2.7 ---
Ciss Input Capacitance
VDS=15V , VGS=0V , f=1MHz
--- 593 ---
Coss Output Capacitance --- 76 --- p