深圳黄金树科技有限公司代理美国福斯特FIRST，无锡新洁能股份有限公司NCEPOWER功率产品，江苏捷捷微JJM可控硅 等二三极，肖特基 LOWVF值电子元件器 本公司长期代理无锡NCEPOWER新功率产品，长期备有大量库存，本公司出售型号NCE0130K TO252沟槽型功率MOSFET 保证每一片来自无锡新洁能原厂原装产品。
Description
The NCE0130K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =30A
RDS(ON) < 28mΩ @ VGS=10V (Typ:24mΩ)
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
NCE0130K NCE0130K TO-252-2L - - -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol Parameter Limit Unit
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID Drain Current-Continuous 30 A
ID (100℃) Drain Current-Continuous(TC=100℃) 21 A
IDM Pulsed Drain Current 70 A
PD Maximum Power Dissipation 85 W
Derating factor 0.57 W/℃
EAS Single pulse avalanche energy (Note 5) 256 mJ
TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 ℃Thermal Characteristic
RθJC Thermal Resistance, Junction-to-Case (Note 2) 1.8 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Symbol Parameter Condition Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 100 110 - V
IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V - - 1 μA
IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2 3 4 V
RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=10A - 24 28 mΩ
gFS Forward Transconductance VDS=5V,ID=10A - 15 - S
Dynamic Characteristics (Note4)
Clss Input Capacitance - 2000 - PF
Coss Output Capacitance - 300 - PF
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
- 250 - PF
NCE0130K
td(on) Turn-on Delay Time - 7 - nS
tr Turn-on Rise Time - 7 - nS
td(off) Turn-Off Delay Time - 29 - nS
tf Turn-Off Fall Time
VDD=50V,RL=5Ω
VGS=10V,RGEN=3Ω
- 7 - nS
Qg Total Gate Charge - 39 - nC
Qgs Gate-Source Charge - 8 - nC
Qgd Gate-Drain Charge
VDS=50V,ID=10A,
VGS=10V
- 12 - nC
Drain-Source Diode Characteristics
VSD Diode Forward Voltage (Note 3) VGS=0V,IS=20A - - 1.2 V
IS Diode Forward Current (Note 2) - - - 30 A
trr Reverse Recovery Time - 32 - nS
Qrr Reverse Recovery Charge
TJ = 25°C, IF = 10A
